Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1661546 | Surface and Coatings Technology | 2007 | 4 Pages |
Abstract
We report the concurrent use of plasma nitridation with cathodic arc deposition to fabricate N-doped TiO2 thin films on Si (100) wafers. The microstructures and optical properties are investigated. Our results reveal that the incorporation of a small amount of nitrogen in TiO2 enhances its visible photoluminescence (PL) significantly giving rise to peaks located at 472, 488, and 548 nm. Our study suggests that plasma nitridation in conjunction with cathodic arc deposition is an effective method to introduce N into TiO2 and to improve the optical properties of the thin films. The effects and underlying mechanism are discussed in details.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.P. Huang, Z.F. Di, Paul K. Chu,