Article ID Journal Published Year Pages File Type
1661624 Surface and Coatings Technology 2007 4 Pages PDF
Abstract

Novel quaternary Ti–Si–C–N coatings composed of nanocrystalline Ti(C, N), amorphous phases of Si3N4 and C, and occasionally free Si and nanocrystalline TiSi2 were deposited on high-speed steel (HSS) substrate at 550 °C using pulsed d.c. plasma chemical vapor deposition (PCVD) technique from TiCl4, SiCl4, CH4, N2, H2 and Ar mixtures. It was found that the hardness increased with the increase of C content and reached the maximum value of approximately 48 GPa at the C content of 38.6 at.%. However, the crystallite size decreased to a minimum value of approximately 7 nm at the content of 38.6 at.% C. It could be detected that crystallite size and hardness almost remained stable during annealing up to 900 °C for Ti–Si–C–N coatings. However, a sharp decrease in the hardness was observed after annealing at 1000 °C due to the growth of grain. A shift of the diffraction peaks was towards higher 2θ for Ti–Si–C–N coatings after annealing at increasing temperatures because of evaporation of COx and resultant loss of C from coating at elevated temperature. In addition, SiOx, TiOx were detected in Ti–Si–C–N coatings after annealing at 1100 °C.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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