| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1661873 | Surface and Coatings Technology | 2007 | 8 Pages |
The effect of pressure on the reactivity of sputtered Al during reactive magnetron deposition was monitored by optical emission spectroscopy (OES) and a Langmuir probe. The deposition experiments were carried out varying the total pressure from 0.1 Pa to 1.2 Pa in an Ar/N2 7:1 flow ratio gas mixture. The deposited layers were analyzed by scanning electron microscopy (SEM) + energy dispersive analysis (EDS), glancing angle X-ray diffractometry (GAXRD) and X-ray photoelectron spectroscopy (XPS). Analysis of the films formed was based on the process parameters via plasma characterization. A correlation was found between the OES results and the amount of Al deposited. Under the present conditions, the base pressure was found to have a significant effect on the nature of the products deposited.
