Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1661981 | Surface and Coatings Technology | 2007 | 6 Pages |
An electrodeposition process using cyclic voltammetry (CV) for preparing silver films containing tungsten (Ag–O–W) on p-type silicon (100) wafers is described. The electrochemical behaviors and microstructural properties of Ag–O–W deposits were compared in the absence and presence of sodium dodecylsulfate (SDS). It was found that SDS functioned as precipitation action to silver ions and promoted strongly the microstructure of Ag–O–W films as its concentration amounted to 5 wt.%. X-ray electron spectroscopy (XPS) investigation demonstrated that the concentration of tungsten was 3.4% and the O/W atom ratio was about 3.0 for Ag–O–W deposits. XPS and X-ray diffraction (XRD) measurements certified that the silver coating was not corroded at temperatures up to 350 °C in air. Finally, the resistivity of the films with the CV cycle number was analyzed.