Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1662283 | Surface and Coatings Technology | 2007 | 5 Pages |
Abstract
Nanocrystalline cubic silicon carbide (nc-3C-SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH4/CH4/H2 gases and influences of filament-to-substrate distance, dF-S, and CH4 gas flow rate, F(CH4), on structural properties of nc-3C-SiC thin films were investigated. SiC-nanocrystallite growth was enhanced with increasing dF-S form 10 to 26Â mm and was prevented with increasing dF-S from 26 to 46Â mm. And the crystallinity was improved with increasing F(CH4) from 1.0 to 1.5Â sccm but deteriorated with increasing F(CH4) from 1.5 to 2.0Â sccm. These findings can be explained by the changes in the fluxes of H and CH3 radicals with dF-S and F(CH4).
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Akimori Tabata, Yusuke Komura,