Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1662290 | Surface and Coatings Technology | 2007 | 5 Pages |
Abstract
Situations where it is desirable to control a chemical vapor deposition reactor to a spatially non-uniform film profile are presented in the context of a planetary reactor system for SiC CVD and a highly controllable reactor system designed for single-wafer combinatorial CVD processing. We focus on reactor designs and operation methods that enable deposition of spatially graded films for combinatorial studies, and on identifying and driving planetary CVD systems to a specific spatially non-uniform deposition rate profile. Known as a “Nearest Uniformity Producing Profile” (NUPP), these target profiles lead to a natural criterion for film uniformity control under wafer rotation.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Raymond A. Adomaitis,