| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1662298 | Surface and Coatings Technology | 2007 | 5 Pages |
Abstract
Tailor-made single source precursors of the type [R2GaSbRâ²2]x (R, Râ²Â = alkyl) have been prepared by a novel synthetic pathways. According to their very low vapor pressures, a specifically designed HV-MOCVD reactor was built, which can be used for the deposition of GaSb material films. The influence of several process parameters such as substrate temperature and reactor geometry on the quality of the resulting films will be discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Stephan Schulz, Sonja Fahrenholz, Daniella Schuchmann, Andreas Kuczkowski, Wilfried Assenmacher, Frank Reilmann, Naoufal Bahlawane, Katharina Kohse-Höinghaus,