| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1663019 | Surface and Coatings Technology | 2007 | 4 Pages |
Abstract
Highly (1000) oriented ZnO films were successfully grown onto silicon substrates using a dual plasma deposition process incorporating a metal cathodic arc source and oxygen ambient. The optical properties of a series of ZnO films deposited on quartz using similar conditions were investigated using UV-visible spectrophotometry, and the effects on the band gap were investigated. The absorption of C-excitons resulting in a blue-shift of the band gap at room temperature is accentuated due to strong absorption at higher energy for light polarized (EÂ //Â c) in the highly (1000) oriented ZnO film.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Y.F. Mei, Ricky K.Y. Fu, G.G. Siu, Paul K. Chu, Z.M. Li, C.L. Yang, W.K. Ge, Z.K. Tang, W.Y. Cheung, S.P. Wong,
