Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1663198 | Surface and Coatings Technology | 2006 | 4 Pages |
Abstract
The dependences of electrical and structural properties on film thickness below 100 nm have been studied on polycrystalline undoped zinc oxide (ZnO) thin films on glass substrates at 200 °C prepared by plasma-assisted electron-beam deposition. From Hall effect measurements, we find that resistivity decreases from 0.47 to 0.02 Ω cm with increasing film thickness, whereas carrier concentration remains almost constant, 1.65-2.0 Ã 1019 cmâ 3, Hall mobility increases from 1.7 to 16.7 cm2/Vs with increasing film thickness. From both high-resolution out-of-plane and in-plane X-ray diffraction (XRD) data, we find substantial changes in the lattice parameters with increasing film thickness below 40 nm; a reduction in the lattice parameter of the a-axis and an increase in the lattice parameter of the c-axis. Williamson-Hall analysis reveals an increase in in-plane grain size with increasing film thickness. This indicates that the dominant scattering mechanism that determines electrical properties is a boundary scattering mechanism.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S. Kishimoto, T. Yamada, K. Ikeda, H. Makino, T. Yamamoto,