Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1663668 | Surface and Coatings Technology | 2005 | 8 Pages |
Abstract
Raman spectroscopy and XPS (X-ray photoelectron spectrometer) analysis of the chemical bonding in the films showed that the phase composition of the films gradually transforms from more graphite like (sp2 C-C bonded) to more Me-carbon (Cr-C bonded), where the content of the carbide phase increases with increase of the bias voltage to Ub = â 350 V and higher. In parallel HRTEM (high-resolution transmission electron microscopy) employing HAADF (high-angle annular dark field) imaging revealed that the microstructure evolved from columnar with carbon accumulated at the column boundaries (Ub = â 65 V, â 95 V) to a structure dominated by onion like C-Cr clusters (Ub = â 120 V), which than converts to a distinct nanoscale layered structure (Ub = â 350 V, â 450 V), finally transforming to a uniform fine grain structure at Ub = â 550 V. The new nanoscale layered structure forms via ion irradiation induced self-organisation mechanism. It is characterized by an abnormally large values for the bi-layer thickness of 20 nm and 25 nm, which are not related to substrate rotation, for films grown at Ub = â 350 V and Ub = â 450 V, respectively. ADF (annular dark field) STEM (scanning TEM) imaging and quantitative EELS (electron-energy loss spectroscopy) analysis showed that the nanoscale multilayer structure comprises of alternating layers of Me-carbide phase (48%C, 52%Cr) and almost pure C (91.34%C), where the bias voltage defines the bi-layer thickness. A coating growth model is proposed accounting for the irradiation-induced ion mixing, re-sputtering, condensation surface temperature effects, nucleation and kinetic segregation process, as well as the diffusivity of the coating elements to explain the phase separation and formation of the self-organised layered nanostructure observed in C/Cr coatings.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
P.Eh. Hovsepian, Y.N. Kok, A.P. Ehiasarian, R. Haasch, J.-G. Wen, I. Petrov,