Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1663788 | Thin Solid Films | 2016 | 4 Pages |
Abstract
A simple method to analyze 4f energy levels of trivalent lanthanide (Ln) ions was demonstrated by conventional X-ray photoelectron spectroscopy (XPS) measurements using Ln ions doped YAlO3 sintered polycrystalline samples. Although XPS peaks derived from Ln 4f states overlapped with the host's valence band consisting of O 2p states, the difference XPS spectra between Ln doped and non-doped samples showed only the Ln 4f peaks due to the large difference of photoionization cross sections between Ln 4f and O 2p orbitals. The difference spectra showing Ln 4f states were aligned at the valence band maximum (VBM) making use of the peaks of Al 2p inner shells, and the Ln3Â + 4f energy levels referred to the VBM were determined from the Ln3Â + 4f peak energies. The Ln3Â + 4f energy levels obtained by this simple method were in good agreement with those previously obtained by resonant ultraviolet photoelectron spectroscopy measurements using single crystal samples.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yuhei Shimizu, Kazushige Ueda,