Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1663943 | Thin Solid Films | 2016 | 5 Pages |
Abstract
The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180Â s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100Â s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hou-Yen Tsao, Yu-Wu Wang, Zhi-Kui Gao,