| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664012 | Thin Solid Films | 2016 | 4 Pages |
•Epitaxial growth of Yb3 +/Er3 + codoped Pb(Zr,Ti)O3 films on SrTiO3 buffered silicon•Upconversion emissions were obtained from the lanthanide ion doped thin films.•Saturated ferroelectric hysteresis loops were observed.•Polar domains were switched by PFM with a phase change of 180°.
Thin films of Yb3 +/Er3 + codoped Pb(Zr,Ti)O3 (PZT:Yb/Er) have been epitaxially grown on the SrTiO3 buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform.
