| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664221 | Thin Solid Films | 2015 | 5 Pages |
Abstract
In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~Â 3Â nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO2 at exposures as low as ~Â 102Â L at 575Â K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO2. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293Â K (room temperature) in an atomic oxygen environment.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.P. McCoy, J. Bogan, A. Brady, G. Hughes,