| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664340 | Thin Solid Films | 2015 | 4 Pages |
Abstract
Inductively coupled plasma (ICP) etching of phase change material W0.03Sb2Te (WST) films is studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness are investigated, respectively. The etch rate is found proportional to the ICP power but inversely proportional to the flow of BCl3. The etching profile is related to gas ratio and bias power. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched WST shows accumulation of low volatility WClx and SbClx on the etched surface.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Lanlan Shen, Sannian Song, Zhonghua Zhang, Zhitang Song, Yan Cheng, Yueqin Zhu, Xiaohui Guo, Weijun Yin, Dongning Yao, Bo Liu, Songlin Feng,