| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664432 | Thin Solid Films | 2016 | 6 Pages |
Abstract
The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current-voltage (I-V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sun Yanmei, Ai Chunpeng, Lu Junguo, Li Lei, Wen Dianzhong, Bai Xuduo,