Thickness oscillations of the transport properties in n-type Bi2Te3 topological insulator thin films

The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20-155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi2Te3 topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi2Te3 films connected with the topological insulator nature of the bismuth telluride.