Article ID Journal Published Year Pages File Type
1664581 Thin Solid Films 2015 4 Pages PDF
Abstract

•Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed.•IGTO is fabricated by co-sputtering the ITO and Ga2O3 targets and hydrogen annealing.•IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10− 3 Ω-cm2 contact resistance.•Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10− 3 Ω-cm2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
, ,