| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664597 | Thin Solid Films | 2015 | 4 Pages |
•PbZr0.52Ti0.48O3 thin films were integrated on Si(001) using nanosheets.•Growth orientation of films was controlled using Ca2Nb3O10 and Ti0.87O2 nanosheets.•The growth temperature is lower, below 600 °C, in comparison to typical 800 °C.•Ferro- and piezoelectric properties of the films are comparable to epitaxial films.
Preferentially (001) and (110)-oriented PbZr0.52Ti0.48O3 (PZT) films with a LaNiO3 (LNO) bottom electrode were deposited on buffered Si (001) substrates using pulsed laser deposition. This high degree of control on growth orientation of these LNO and PZT thin films was achieved by using Ca2Nb3O10 (CNO) and Ti0.87O2 nanosheets as buffer layers deposited on the Si by the Langmuir–Blodgett technique. The measured remnant polarization (Pr) and piezoelectric response of the (001)-oriented PZT films on CNO-nanosheets are 16 μC/cm2 and 120 pm/V, respectively. These values are comparable to the values reported for the epitaxial PZT films grown on CeO2/yttria-stabilized zirconia (YSZ) buffered Si substrates while the maximum deposition temperature is lowered from 800 °C to 600 °C which are the typical deposition temperatures of YSZ and PZT respectively. This lower maximum deposition temperature shows that the integration of PZT films by the nanosheet buffer layers is not limited to Si, but can be extended to substrates with low processing temperatures like glass for various device applications in the future.
