| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664649 | Thin Solid Films | 2015 | 6 Pages |
•Synthesis of BLT thick films by sol gel technology•Application of organo-polymeric additives to obtain crack free BLT thick films•Characterization of structural properties by XRD, AFM and TEM•Characterization of ferroelectric properties•Ferroelectric properties obtained for BLT thick films comparable to that reported in literature
Crack free (Bi3.25La0.75Ti3O12) BLT film of ~ 1 μm thickness was deposited on Pt/Si(100) wafer by sol–gel methodology using a polymeric additive: polyvinyl pyrrolidone. The remnant polarization and coercive field values measured from the P–E hysteresis loops for BLT films annealed at 650 °C and 700 °C were 10 μC/cm2, 110 kV/cm and 11.5 μC/cm2, 111.5 kV/cm, respectively. The leakage current in the BLT film was remarkably low up to an electric field of 150 kV/cm for which the measured leakage current density was 2.5 × 10− 6 A/cm2. The leakage current behavior showed Ohmic conduction in the low-field region and was dominated by space charge in the high-field region.
