Cu2ZnSnSb(S,Se,Te)4 film formation from selenization of sputtered self-prepared single ceramic target

•Cu2ZnSnSb(S,Se,Te)4 thin films were deposited by sputtering single ceramic target.•Structural and electrical properties of the films are presented.•Properties of CZTASSeTe thin films were related to Se vaporization temperature.•Selenized film at 600 °C presents the best crystal quality and enhanced Hall mobility.

Single-layered Cu2ZnSnSb(S,Se,Te)4(CZTASSeTe) thin films were prepared on Mo/glass substrate by radio frequency magnetron sputtering of a self-prepared single ceramic target. Successive selenization for the as-deposited film at a substrate temperature of 200 °C in Se-atmosphere was performed at various temperatures between 400 °C and 600 °C for 1 h. Structural investigation of the grown films revealed single-phase tetragonal structure corresponding to kesterite CZTSSe. All measured samples were found to exhibit p-type conductivity. An improved grain size and crystal quality with suitable atomic ratio [Cu/(Zn + Sb + Sn) = 0.89, Zn/Sn = 1.15, and metal/(S + Se + Te) = 1.02] obtained for CZTASSeTe film selenized at 600 °C. The Hall concentration increased from 1.06 to 5.8 × 1017 cm− 3, mobility increased from 2.82 to 44.3 cm2 V− 1 s− 1, and resistivity decreased from 20.92 to 0.24 Ω cm as the precursor film is selenized to 600 °C. An enhanced Hall mobility can be ascribed to the larger grains with better crystallinity and composition in the selenized film at 600 °C. Our large grain size and maximized mobility for CZTASSeTe film at the selenization temperature of 600 °C from single ceramic target can be useful for the fabrication of the CZTASSeTe absorber layer.