| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664693 | Thin Solid Films | 2015 | 4 Pages |
•The valency of Sb changed from Sb3 + to Sb5 + in ZnO grown by MOCVD with increasing mole ratio of Sb precursor to Zn precursor.•The conductivity type of Sb doped ZnO was also changed from p-type to n-type accordingly.•The p-type ZnO was obtained only for ZnO films with lower mole ratio of Sb precursor with dominated trivalent (Sb3 +) ions.
Sb-doped ZnO thin films with different Sb concentrations were grown by varying mole ratio of Sb precursor to Zn precursor during the growth process using metal organic chemical vapor deposition technology. It was found that the valency of Sb changed from Sb3 + to Sb5 + in Sb doped ZnO with increasing mole ratio of Sb precursor to Zn precursor. The p-type ZnO was obtained only for ZnO films with lower mole ratio of Sb precursor. The conductivity type of Sb doped ZnO was changed from p-type to n-type accordingly. These results were suggested that the valency of Sb in ZnO is more important for obtaining p-type Sb doped ZnO thin films.
