| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664879 | Thin Solid Films | 2015 | 4 Pages |
•Ordered 6,13-bis (triisopropylsilylethynyl) (TIPS)-Pentacene films are formed on substrates.•TIPS-Pentacene films can work with n-type Si as Schottky-type rectifying devices.•TIPS-Pentacene/SiO2 show obvious effects of accumulation and depletion with bias.
Two-hundred-nanometer-thick 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-Pentacene) films were formed on Si substrates by spin coating. The rms roughness of the spun dendrite-type films is ~ 40 nm, determined by atomic force microscopy. Ordered crystalline structures were revealed by x-ray diffraction measurement, and the dominated absorption band from the ordered structures was further confirmed by ultraviolet-visible spectroscopy. The current–voltage characteristics of the junctions formed using TIPS-Pentacene on n-type Si substrates show good rectifying behavior with rectification ratios over 100 at 1 V. In the heterojunctions, barrier heights of ~ 0.8 eV and ideality factors of ~ 2 were determined based on thermionic emission model. It shows that TIPS-Pentacene can work well with n-type Si to form Schottky-type rectifying devices. Capacitance–voltage measurement performed on the metal–insulator–semiconductor structure of TIPS-Pentacene on SiO2 shows obvious effects of accumulation and depletion in TIPS-Pentacene with bias. The maximum width of the depletion layer in TIPS-Pentacene is estimated to be 9.4 nm.
