Optimization of growth parameters for growth of high quality heteroepitaxial 3C–SiC films at 1200 °C

•Epitaxial 3C–SiC on Si films were grown at 1200 °C.•The layers show good crystalline quality measured by XRD rocking curves.•The best crystalline quality is reached on on-axis substrates.

In order to reduce the residual stress caused by the mismatch of thermal expansion coefficients of 3C–SiC layers grown on Si after cooling down to room temperature, the growth temperature was reduced from usually above 1300 °C to 1200 °C. Epitaxial layers with high crystalline quality were grown on 1 × 1 cm2 (100) Si substrates. The layers were evaluated by means of x-ray diffraction (XRD), Raman measurements, scanning electron microscopy and atomic force microscopy. Full width at half maximum values of 0.19° for XRD rocking curve measurements of the (200) 3C–SiC peak were achieved, indicating high crystalline quality of the layers and epitaxial growth. For optimized growth at 1200 °C a high C/Si-ratio, on-axis substrates and a layer thickness of over 1 μm are necessary.