| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1664927 | Thin Solid Films | 2014 | 6 Pages |
•Gadolinia-doped ceria (GDC) films deposited on yttria-stabilized zirconia (YSZ)•GDC films deposited by atmospheric pressure plasma jet•Mix valence state and oxygen deficiency proven by X-ray photoelectron spectroscopy•Formation of (GDC + YSZ) solid solution resulted in the degradation of the total conductivity.•Optimization of sintering temperature for GDC barrier needed for high performance and stability
Atmospheric pressure plasma jet was applied to grow 10 mol% gadolinia-doped ceria (10GDC) films on poly-crystalline 8 mol% yttria-stabilized zirconia (8YSZ) via precursor solutions of nitrate salts. The morphology of as-deposited gadolinia-doped ceria (GDC) film represented interconnected particles with irregular shapes covered on the 8YSZ substrates. The mixing Ce4 +/Ce3 + valence state and oxygen deficiency (O/Ce + Gd: 1.75) in as-deposited films were proven by X-ray photoelectron spectroscopy quantification study. As increasing the sintering temperature over 1300 °C, the interdiffusion between 10GDC film and 8YSZ substrate occurred due to the formation of (GDC + YSZ) solution analyzed by X-ray diffraction and Raman analyses, which resulted in the degradation of the total conductivity of electrolytes. For the application of solid oxide fuel cell, 10GDC film sintered at 1300 °C for 2 h with a comparable conductivity could be feasibly applied as the diffusion barrier between 8YSZ electrolyte and cathode materials for the prevention of interdiffusion.
