Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1664985 | Thin Solid Films | 2014 | 4 Pages |
•MoTiO5-based flash memories have been fabricated.•MoTiO5 trapping layers could be formed by co-sputtering.•MoTiO5 layers with annealing exhibited a good memory performance.•Multiple material analyses confirm that annealing enhanced crystallization.
In this study, high-K MoTiO5 dielectrics were applied as charge trapping layers in fabricated metal-oxide-high-K MoTiO5-oxide-Si-type memory devices. Among the applied MoTiO5 trapping layer treatment conditions, annealing at 900 °C yielded devices that exhibited superior memory performance, such as a larger memory window and faster programming/erasing speed. Multiple material analyses, namely X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, confirmed that annealing at 900 °C can improve the material quality as a result of crystallization. The fabricated MoTiO5-based memory devices show potential for future commercial memory device applications.