Growth kinetics of ion beam sputtered Al-thin films by dynamic scaling theory

•Growth kinetics of ion beam sputtered Al-thin films was studied by dynamic scaling theory.•AFM images display different morphologies for different deposition times.•The growth governing scaling exponents (α and β) was determined.•Considered four different responsible smoothening/roughening phenomena

This paper reports the study of growth kinetics of ion beam sputtered aluminum thin films. Dynamic scaling theory was used to derive the kinetics from atomic force microscopy (AFM) measurements. AFM imaging revealed that surface incorporates distinctly different morphologies. Variation in deposition times resulted in such distinctiveness. The growth governing static (α) as well as dynamic (β) scaling exponents has been determined. The exponent α decreased as the deposition time increased from 3 to 15 min. Consequently, the interfacial width (ξ) also decreased with critical length (Lc), accompanied with an increase in surface roughness. Surface diffusion becomes a major surface roughening phenomenon that occurs during deposition carried out over a short period of 3 min. Extension of deposition time to 15 min brought in bulk diffusion process to dominate which eventually led to smoothening of a continuous film.