| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1665186 | Thin Solid Films | 2014 | 4 Pages |
•As the GeH4 flow rate increases the content of oxygen decreases.•GeH bonds show the highest value in a-SiGe:H films with GeH4 flow of 105 sccm.•Films with GeH4 flow of 105 sccm show the highest activation energy.•An optimum incorporation of germanium is obtained with GeH4 flow rate of 105 sccm.•At 200 °C the optimum condition of the a-SiGe:H films remain with no changes.
In this work, the study of germane flow rate in electrical properties of a-SiGe:H films is presented. The a-SiGe:H films deposited by low frequency plasma-enhanced chemical vapor deposition at 300 °C were characterized by Fourier transform infrared spectroscopy, measurements of temperature dependence of conductivity and UV–visible spectroscopic ellipsometry. After finding the optimum germane flow rate conditions, a-SiGe:H films were deposited at 200 °C and analyzed. The use of a-SiGe:H films at 200 °C as active layer of low-temperature ambipolar thin-film transistors (TFTs) was demonstrated. The inverted staggered a-SiGe:H TFTs with Spin-On Glass as gate insulator were fabricated. These results suggest that there is an optimal Ge content in the a-SiGe:H films that improves its electrical properties.
