Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer

•Epitaxial growth of SrTiO3 on GaAs(001)•Oxide molecular beam epitaxy•Ti-based surface passivation

Epitaxial SrTiO3 (STO) layers were grown on GaAs(001) substrates by molecular beam epitaxy. A Ti-based surface passivation was used prior to STO growth. The different steps of this passivation procedure are discussed on the basis of reflection high energy electron diffraction experiments. We also show that the STO/GaAs template presents an excellent structural quality with a flat surface, an abrupt semiconductor/oxide interface, and a good crystallinity. Such STO/GaAs templates open perspectives for the integration of perovskite oxides on semiconductor substrates.