Stabilization of robust antiferromagnetic insulating phase in Nd1 − xSrxMnO3 (x = 0.46) by application of biaxial strain

•Charge ordered phase is stabilized in Nd1 − xSrxMnO3 (x ~ 0.46) films.•Films showed nearly 100% magneto-resistance.•Four-order drop in resistivity is observed on application of 6 T field.•The large magneto-resistance is constant over a wide temperature window.•This finding opens possibilities of utilization of these films.

Nd1 − xSrxMnO3 (x = 0.46) films of different thicknesses were deposited on LaAlO3 substrate. A first order metal to insulator transition is observed under 8 T applied magnetic film in 60 nm thin film which showed robust insulating antiferromagnetic phase in the absence of field. The thicker films of 100 nm and 230 nm showed dominant ferromagnetic metallic phase. The 60 nm film showed nearly 100% magnetoresistance over a large temperature window that can be exploited for technological applications.