Infrared stealth property based on semiconductor (M)-to-metallic (R) phase transition characteristics of W-doped VO2 thin films coated on cotton fabrics

•The infrared stealth cotton fabric was coated by W-doped VO2 as the filler.•The emissivity of coated fabric was 0.752.•The abrupt amount in the emissivity of coated fabric was 0.2 in the phase transition.•The infrared stealth cotton fabric was adaptable to the surroundings spontaneously.

The infrared stealth fabric was prepared using W-doped VO2 (M) paints by the coating technology. The thermochromic W-doped VO2 (M) was synthesized through hydrolysis method and two-step calcinations under N2 atmosphere. The powders were evaluated by scanning electron microscopy, X-ray diffraction patterns and differential scanning calorimetry. The infrared emissivity of coated cotton fabric was measured by IR-2 Infrared Emissometer, which was as low as 0.752. The low infrared radiation intensity for coated cotton fabric was detected using the infrared imaging systems above the phase temperature of W-doped VO2 (M). The results indicated that the W-doped VO2 (M) thin films exhibited thermal infrared stealth performance, which could adapt to the surroundings spontaneously.