| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1665483 | Thin Solid Films | 2014 | 5 Pages |
•Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was selected as a sulfur source.•CuInS2 (CIS) thin films were prepared by sulfurization using DTBS.•CIS thin films sulfurized at high temperature and moderate DTBS flow rate.•The films have appropriate grains and good crystalline quality.
Sulfurization growth of single-phase chalcopyrite CuInS2 (CIS) thin films was demonstrated using less hazardous liquid metal–organic ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence spectra. The measurement results indicated that the CIS film formed by this method was suitable as a photo-absorbing layer for CIS-based solar cells.
