Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1665509 | Thin Solid Films | 2014 | 6 Pages |
Abstract
Terbium doped zinc oxide (Tb:ZnO) films were deposited by radio frequency magnetron sputtering on (100) single-crystalline silicon substrates at low temperature (TS = 100 °C). In this work, structural changes, optical properties and the associated photoluminescence (PL) responses are analyzed upon the annealing treatments. Post-annealing treatments from annealing temperature Ta = 400 °C up to 1000 °C by steps of 100 °C were performed. Chemical analyses by energy dispersive X-ray spectrometry measurements showed a constant dopant concentration of 3 at.%. Up to 600 °C, the band gaps (Eg) decreased with Ta from 3.44 down to 3.37 eV. Above 600 °C, the band gap raised from 3.37 up to 3.42 eV (for 900 °C). Depending on Ta, a bi-axial stress was found varying from a compressive value of â 0.21 GPa (400 °C) down to a tensile value of 0.05 GPa (1000 °C). PL mechanisms of the Tb:ZnO film are then discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Ziani, C. Davesnne, C. Labbé, J. Cardin, P. Marie, C. Frilay, S. Boudin, X. Portier,