Article ID Journal Published Year Pages File Type
1665524 Thin Solid Films 2014 4 Pages PDF
Abstract

•Al-doped zinc oxide (AZO) thin films were grown by RF-magnetron sputtering.•AZO nanopowder compacted target was prepared by a sol–gel method.•AZO thin films are polycrystalline and have preferred orientation along c-axis.•We report a photovoltaic effect in Si(p)/porous silicon/AZO heterostructure.•The cell exhibits an efficiency of 5%.

Highly transparent conducting Al-doped zinc oxide (AZO) thin films have been grown onto p-type porous silicon substrates by RF-magnetron sputtering at room temperature using aluminum doped nanocrystalline powder. The obtained AZO films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The films are highly transparent in the visible wavelength region with a transmittance higher than 85% and an electrical resistivity of 1.56 × 10− 4 Ω·cm was obtained at room temperature. On the other hand, we have studied the position of the p–n junction involved in the In2O3:SnO2/(n)AZO/Si(p) structure, by electron-beam induced current technique. Current density–voltage characterizations in dark and under illumination were also investigated. The cell exhibits an efficiency of 5%.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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