Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1665613 | Thin Solid Films | 2014 | 7 Pages |
Abstract
This report describes the dielectric properties of electron-beam deposited Y2O3 thin films examined in metal-insulator-metal-type structures fabricated onto quartz substrates. The dielectric measurements have been carried out in the frequency domain from 10Â mHz to 10Â MHz, with a frequency response analyser. Frequency characteristics of the complex capacitance, as well as Cole-Cole and Nyquist graphs, have been presented and discussed for the temperature range 398-523Â K. The results have been analyzed in terms of equivalent circuit models containing resistance-capacitance and constant phase elements (CPE). We have determined the values of the resistance, capacitance and CPE, which characterize the Y2O3 film and near-electrode regions. It has been shown that for high frequencies/low temperatures the dielectric properties are connected with Y2O3 film, while for low frequencies/high temperatures the dielectric response is dominated by the near-electrode regions. In the frequency range 0.1-10Â MHz the important contribution of series resistance of electrodes and leads has been observed.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Tadeusz Wiktorczyk, Piotr BiegaÅski,