Article ID Journal Published Year Pages File Type
1665802 Thin Solid Films 2013 4 Pages PDF
Abstract

•Ge was grown using inductively coupled plasma (ICP)-assisted DC sputtering.•We obtained randomly oriented Ge thin films using DC sputtering without ICP source.•We obtained preferred orientation Ge thin films using ICP-assisted DC sputtering.•We also obtained amorphous Ge thin films using ICP-assisted DC sputtering.•The optical band gaps of the deposited Ge films were estimated by Tauc's plots.

Growth of low-temperature metal-free crystallized Ge film was investigated using inductively coupled plasma-assisted DC magnetron sputtering. The films were deposited both without and with inductively coupled plasma. The films deposited by a conventional DC magnetron sputtering system had randomly oriented crystalline structures. However, the addition of inductively coupled plasma developed crystal phase from an amorphous to a preferred oriented crystalline with increasing sputtering power. The optical band gaps of the amorphous and crystalline phases were 0.96 eV and 0.7 eV, respectively.

Keywords
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
, , , ,