Article ID Journal Published Year Pages File Type
1665843 Thin Solid Films 2013 28 Pages PDF
Abstract
Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles are deposited onto intrinsic Si and laser processed using an 807.5 nm continuous wave laser. During laser processing the particles as well as a surface-near substrate layer are melted to subsequently crystallize in the same orientation as the substrate. The doping profile is investigated by secondary ion mass spectroscopy revealing a constant B concentration of 2 × 1018 cm− 3 throughout the entire analyzed depth of 5 μm. Four-point probe measurements demonstrate that the effective conductivity of the doped sample is increased by almost two orders of magnitude. The absolute doping depth is estimated to be in between 8 μm and 100 μm. Further, a pn-diode is created by laser doping an n-type c-Si substrate using the Si NPs.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
, , , , , , , , , , , , , ,