Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1665847 | Thin Solid Films | 2013 | 4 Pages |
Abstract
In this paper, we report a vertical Schottky ultraviolet photodetector based on the MgZnO:Al transparent electrode. The vertical MgZnO:Al/MgZnO/Au photodetector was fabricated on the sapphire substrate, which shows a good Schottky contacting character. The transparent and conducting MgZnO:Al thin film was developed by magnetron sputtering and annealed to fit the request of our detection. The device is structured vertically in an order of sapphire/MgZnO:Al/MgZnO/Au. The device shows a good Schottky contacting character. The maximum responsivities of the photodetector are 0.0266Â mA/W at 0Â V bias and 13.31Â mA/W under 10Â V backward bias, respectively. The peak response wavelength is located at 340Â nm and cut-off is at the wavelength of 355Â nm. The turn-on voltage is 2.0Â V and the breakdown voltage is 40Â V. The leakage current is less than 70Â pA at a reverse bias of 15Â V.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Chaoqun Li, Zhenzhong Zhang, Hongyu Chen, Xiuhua Xie, Dezhen Shen,