| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1665865 | Thin Solid Films | 2013 | 6 Pages |
•Amorphous InHfZnO (a-IHZO) thin film transistor (TFT) was comprehensively studied.•Y-function was adopted to extract mobility on a-IHZO TFT.•Low temperature measurements show high carrier concentration in a-IHZO TFT.•Low frequency noise stemming from carrier trapping–detrapping was characterized.•Numerical simulation was performed based on band–tail states and interface traps.
The static characteristics and low frequency noise of amorphous InHfZnO (a-IHZO) thin film transistor (TFT) were comprehensively investigated. The effective mobility extracted from the transfer curve and gate-to-channel capacitance-voltage characteristic is compared with that obtained by Y-function adopted on amorphous-oxide-semiconductor TFT. The static characteristics at low temperature show nearly independent electrical property of a-IHZO TFT, illustrating the degenerate behavior of a-IHZO TFT inversion layer. Noise measurement was performed on a-IHZO TFT and indicates that fluctuations stem from carrier trapping–detrapping at the interface between the oxide and channel layer and/or in bulk traps. Based on the analysis with static characteristics and low frequency noise of a-IHZO TFT, a numerical model was proposed and the model including band–tail states conduction and interface traps provides a good agreement with the experimental results.
