Article ID Journal Published Year Pages File Type
1665930 Thin Solid Films 2013 5 Pages PDF
Abstract
► The InAlAs/InGaAs co-integrated structures are demonstrated and compared. ► The large gate-to-source turn-on voltage and drain-to-source current are obtained. ► Two transfer characteristics are implemented for direct-coupled FET logic.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
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