Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1665930 | Thin Solid Films | 2013 | 5 Pages |
Abstract
⺠The InAlAs/InGaAs co-integrated structures are demonstrated and compared. ⺠The large gate-to-source turn-on voltage and drain-to-source current are obtained. ⺠Two transfer characteristics are implemented for direct-coupled FET logic.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jung-Hui Tsai, Chia-Hong Huang, Jhih-Jhong Ou-Yang, Yi-Ting Chao, Jia-Cing Jhou, You-Ren Wu,