Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1666099 | Thin Solid Films | 2013 | 4 Pages |
In this study we investigated the influence of cobalt thickness (from 50 nm to 10 nm) on the kinetics and texture of CoSi2 layers. In-situ X-ray diffraction measurements were performed during isothermal annealing to determine CoSi2 kinetics as explained in a previous publication. Decreasing the initial cobalt thickness (50 nm, 30 nm, and 10 nm) induces a slowdown of the formation rate, especially for the 10 nm Co layer. A model based on CoSi2 nucleation is used to explain this phenomenon.
► In-situ X-ray diffraction experimental setup used to characterize CoSi2 thickness ► During isothermal annealing in a furnace, CoSi2 texture does not change. ► CoSi2 growth controlled by nuclei growth and 1D diffusion process ► Our 1D diffusion model is in good agreement with experimental results. ► Decreasing the initial Co thickness decreases CoSi2 formation rate.