Preparation of SnS2 thin films by close-spaced sublimation at different source temperatures

In the recent years, a number of methods had been reported for preparing tin disulfide (SnS2) films. Compared with the other available methods, close-spaced sublimation (CSS) was reported as a simple, cost-effective, and non-wet thin film deposition technique. The present research aimed to demonstrate a CSS approach to prepare SnS2 thin films using SnS2 powder as a source. The influence of the source temperature on the chemical composition, crystal structure, surface morphology, and optical band gap of tin sulfide thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope, and ultraviolet–visible absorption spectra, respectively. By the CSS technique, SnS2 thin films were prepared at the source temperature of 580 °C, and SnS2 crystals showed a characteristic of a preferred orientation along (001) plane, possessing hexagonal phase and sheet appearance. The optical band gap of SnS2 thin films was calculated to be 2.08 eV. At the source temperature of 650 °C, the tin sulfide thin films mainly consisted of Sn2S3 along with other phases and exhibited rod appearance. Therefore, it was found that the optimal source temperature for the preparation of SnS2 thin films was 580 °C using the CSS method. Further studies are recommended to optimize and apply this thin film in solar cells.

► Preparation of SnS2 thin film by close-spaced sublimation using SnS2 powder ► The source temperature was a key factor in the preparation of SnS2 thin films. ► The source temperature 580 °C is suitable for the preparation of SnS2 thin film.