| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666252 | Thin Solid Films | 2013 | 4 Pages |
Abstract
⺠Operating parameters of Addon radio-frequency nitrogen plasma source studied ⺠Their influence on molecular beam epitaxy (MBE) growth of GaN analyzed ⺠MBE growth rate of GaN well correlates with output of the plasma emission sensor. ⺠Optical emission spectroscopy measurements of the nitrogen plasma made ⺠Nitrogen excited molecules mainly contribute to plasma-assisted MBE growth of GaN
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Authors
K. Klosek, M. Sobanska, G. Tchutchulashvili, Z.R. Zytkiewicz, H. Teisseyre, L. Klopotowski,