| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666398 | Thin Solid Films | 2013 | 5 Pages |
Abstract
Metal-ferroelectric-insulator-semiconductor structures with BiFeO3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425Â K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65Â eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Pi-chun Juan, Cheng-li Lin, Chuan-hsi Liu, Chun-heng Chen, Yin-ku Chang, Ling-yen Yeh,