| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666487 | Thin Solid Films | 2012 | 8 Pages |
Abstract
⺠HfO2 and ZrO2 thin films were grown on TiN using Atomic Layer Deposition process. ⺠We report an amorphous to crystalline transition with thickness and temperature. ⺠A bipolar switching occurs in HfO2 and ZrO2 based Resistive Random Access Memories. ⺠A modification of the interface between oxide and TiN is observed over cycling.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Salaün, H. Grampeix, J. Buckley, C. Mannequin, C. Vallée, P. Gonon, S. Jeannot, C. Gaumer, M. Gros-Jean, V. Jousseaume,