| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666507 | Thin Solid Films | 2012 | 4 Pages |
This is the report of a CuInSe2(CIS) solar cell prepared by a full metal organic chemical vapor deposition (MOCVD) technique. A CIS/Zn(S,O)/ZnO:B solar cell was prepared by a MOCVD technique. CIS absorber layers were grown by a three step MOCVD technique on a Mo back electrode which was coated on soda-lime glass. Zn(S,O) buffer and ZnO:B window layers were also consecutively fabricated on the CIS absorber layer by a MOCVD technique. The CIS/Zn(S,O)/ZnO:B solar cell prepared in this study demonstrated an energy conversion efficiency of 10.45%, a fill factor of 60.3%, an open circuit voltage of 487 mV, and a short circuit current density of 35.7 mA/cm2.
► CuInSe2 based solar cell prepared by metal organic chemical vapor deposition (MOCVD). ► Zn(S,O) buffer and ZnO:B window layers were consecutively fabricated by a MOCVD. ► One bound exciton photoluminescence peak of γ-In2Se3 was detected at 2.113 eV. ► The energy conversion efficiency and fill factor are 10.45% and 60.3%, respectively. ► Open circuit voltage is 487 mV and short circuit current density is 35.7 mA/cm2.
