Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1666527 | Thin Solid Films | 2012 | 5 Pages |
Abstract
Interactions between Ar-O2 mixture plasmas and Zn thin film on polyethylene terephthalate (PET) were investigated using the combinatorial plasma process analyzer, on the basis of nondestructive depth analyses of chemical bonding states at Zn thin film and Zn/PET interface via hard X-ray photoelectron spectroscopy (HXPES). After the Ar-O2 plasma exposure, peak-area ratio of O 1 s to Zn 2p3/2 evaluated from the HXPES spectra is found to increase with increasing the ion saturation current Ã time and saturated at the value obtained from ZnO. The HXPES C 1 s spectra measured at a take-off angle (TOA) of 80° showed insignificant change in oxygen functionalities (OCO bond and CO bond) after the deposition of Zn thin film and the plasma exposure. Whereas, the HXPES C 1 s spectra measurement at a TOA of 20° suggested that the oxygen functionalities degraded in shallower regions up to about a few nanometer from the Zn/PET interface due to deposition of Zn thin film. However, after the plasma exposure, oxidation of PET substrate at the degraded layer of Zn/PET interface was caused by oxygen radicals and/or ions, which diffused through the Zn thin film.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ken Cho, Kosuke Takenaka, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, Masaru Hori,