Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1666558 | Thin Solid Films | 2012 | 6 Pages |
Abstract
The structural damage of silicon dioxide films produced by different ion species has been studied by etch rate profiling. The etch rate showed a good correlation with the damage estimated by a simulation software. The etch rate increases almost linearly up to a certain damage level then it saturates to a value which depends on the implanted ion and on the etching chemistry. This suggests a different kind of damage mechanism induced by the different implanted ions.
► SiO2 etch rate increases linearly up to a threshold damage level. ► After this threshold, the etch rate does not increase significantly. ► The saturation level depends on the implanted specie. ► A single parameter allows modeling different etching chemistries.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
E. Bellandi, V. Soncini,