| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666571 | Thin Solid Films | 2012 | 4 Pages |
Abstract
We investigated the microstructures and electrical properties of 8.4% nitrogen-doped GeBi(6 at.%)Te and GeBi(6 at.%)Te films that were thermally annealed in air atmosphere. Despite annealing in air, GeBi(6 at.%)Te films showed only phase transition from cubic to rhombohedral phases. However, the Ge oxide, island shaped metallic Te, and Ge–Bi–Te phases were generated in 8.4% nitrogen-doped GeBi(6 at.%)Te films.
► We made and annealed GeBi(6 at.%)Te films with and without doped nitrogen. ► GeBi(6 at.%)Te films showed only phase transition from cubic to rhombohedral phases. ► Nitrogen-doped GeBi(6 at.%)Te showed severe oxidation.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Ki-Hong Kim, Jun-Ho Lee, Yong-Koo Kyoung, Sang-Jun Choi,