| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666649 | Thin Solid Films | 2012 | 5 Pages |
By using the transfer matrix method and the nearly free electron approximation, we investigate effects of interfacial roughness on electron transport through double-barrier quantum wells. The barrier roughness is described by the k-correlation model, and the interface is characterized by the roughness exponent, in-plane correlation length, and root mean square height. Our analysis demonstrates that the transmission probability is sensitive to roughness parameters. Two behaviors are observed for this sensitivity depending on whether the incident wavelength is larger or smaller than the correlation length.
► Electron transmission through quantum wells with interfacial roughness was studied. ► The method was based on transfer matrix method and nearly free-electron approximation. ► The barrier roughness was described by the k-correlation model. ► Transmission probability was studied for different values of roughness parameters. ► Two different behaviors for the effects of roughness on transmission were observed.
